GL41BHE3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
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Technische Details GL41BHE3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-213AB, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF (Glass), Packaging: Tape & Reel (TR).
Weitere Produktangebote GL41BHE3/96 nach Preis ab 0.17 EUR bis 0.76 EUR
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GL41BHE3/96 | Vishay General Semiconductor |
Rectifiers 1 Amp 100 Volt 30 Amp IFSM |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41BHE3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
auf Bestellung 4270 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GL41BHE3/96 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1 Amp 100 Volt 30 Amp IFSM
Rectifiers 1 Amp 100 Volt 30 Amp IFSM
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.52 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.17 EUR |
| GL41BHE3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.33 EUR |