GL41G-E3/97 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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Technische Details GL41G-E3/97 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Weitere Produktangebote GL41G-E3/97 nach Preis ab 0.22 EUR bis 0.89 EUR
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GL41G-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 7355 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41G-E3/97 | Vishay General Semiconductor |
Rectifiers 1 Amp 400 Volt 30 Amp IFSM |
auf Bestellung 18275 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GL41G-E3/97 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 7355 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.27 EUR |
| GL41G-E3/97 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1 Amp 400 Volt 30 Amp IFSM
Rectifiers 1 Amp 400 Volt 30 Amp IFSM
auf Bestellung 18275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.89 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.29 EUR |
| 5000+ | 0.22 EUR |