GP10K-E3/54 Vishay General Semiconductor
auf Bestellung 8609 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
45+ | 1.16 EUR |
53+ | 0.99 EUR |
100+ | 0.69 EUR |
500+ | 0.54 EUR |
1000+ | 0.42 EUR |
2500+ | 0.38 EUR |
5500+ | 0.34 EUR |
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Technische Details GP10K-E3/54 Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Weitere Produktangebote GP10K-E3/54
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GP10K-E3/54 | Hersteller : Vishay | Diode Switching 800V 1A 2-Pin DO-41 T/R |
Produkt ist nicht verfügbar |
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GP10K-E3/54 | Hersteller : Vishay | Diode Switching 800V 1A 2-Pin DO-41 T/R |
Produkt ist nicht verfügbar |
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GP10K-E3/54 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 50uA Case: DO41 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 800V Features of semiconductor devices: glass passivated Reverse recovery time: 3µs Capacitance: 7pF Type of diode: rectifying Max. forward impulse current: 30A Max. forward voltage: 1.2V Load current: 1A Leakage current: 50µA Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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GP10K-E3/54 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GP10K-E3/54 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GP10K-E3/54 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 50uA Case: DO41 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 800V Features of semiconductor devices: glass passivated Reverse recovery time: 3µs Capacitance: 7pF Type of diode: rectifying Max. forward impulse current: 30A Max. forward voltage: 1.2V Load current: 1A Leakage current: 50µA |
Produkt ist nicht verfügbar |