GP3D006A065A SemiQ
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 229pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
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Technische Details GP3D006A065A SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 229pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A, Current - Reverse Leakage @ Vr: 15 µA @ 650 V.
Weitere Produktangebote GP3D006A065A nach Preis ab 1.15 EUR bis 4.19 EUR
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GP3D006A065A | SemiQ |
SiC Schottky Diodes SiC Schottky Diode 6A 650V |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3D006A065A |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 6A 650V
SiC Schottky Diodes SiC Schottky Diode 6A 650V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.19 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.27 EUR |
| 5000+ | 1.16 EUR |
| 10000+ | 1.15 EUR |