| Anzahl | Preis |
|---|---|
| 1+ | 26.17 EUR |
| 10+ | 21.16 EUR |
| 120+ | 18.29 EUR |
| 510+ | 17.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GP3D050B170B SemiQ
Description: 1700V, 50A SIC DIODE, TO-247-2L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 3511pF @ 1V, 1MHz, Current - Average Rectified (Io): 151A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV.
Weitere Produktangebote GP3D050B170B nach Preis ab 17.29 EUR bis 27.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
GP3D050B170B | SemiQ |
 Description: 1700V, 50A SIC DIODE, TO-247-2LPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3511pF @ 1V, 1MHz Current - Average Rectified (Io): 151A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GP3D050B170B |
|
Hersteller: SemiQ
Description: 1700V, 50A SIC DIODE, TO-247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3511pF @ 1V, 1MHz
Current - Average Rectified (Io): 151A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
Description: 1700V, 50A SIC DIODE, TO-247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3511pF @ 1V, 1MHz
Current - Average Rectified (Io): 151A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.88 EUR |
| 30+ | 17.29 EUR |