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GP3T016A120H

GP3T016A120H SemiQ

GP3T016A120H.pdf
Hersteller: SemiQ
Description: GEN3 1200V, 16M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.59 EUR
10+14.38 EUR
100+10.87 EUR
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Technische Details GP3T016A120H SemiQ

Description: GEN3 1200V, 16M SIC MOSFET, TO-2, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 132A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V, Power Dissipation (Max): 484W (Tc), Vgs(th) (Max) @ Id: 4V @ 20mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V.

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GP3T016A120H GP3T016A120H Hersteller : SemiQ GP3T016A120H.pdf SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L
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