| Anzahl | Preis |
|---|---|
| 1+ | 17.6 EUR |
| 10+ | 10.68 EUR |
| 120+ | 10.67 EUR |
| 510+ | 9.84 EUR |
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Technische Details GP3T020A120H SemiQ
Description: GEN3 1200V, 20M SIC MOSFET, TO-2, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 4V @ 20mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V.
Weitere Produktangebote GP3T020A120H nach Preis ab 11.29 EUR bis 18.81 EUR
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GP3T020A120H | Hersteller : SemiQ |
 Description: GEN3 1200V, 20M SIC MOSFET, TO-2Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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