GPAS1005 Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| Anzahl | Privatkunde |
|---|---|
| 800+ | 0.9 EUR |
| 1600+ | 0.74 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
800 Stücke
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Produktbewertung abgeben
Technische Details GPAS1005 Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Weitere Produktangebote GPAS1005 nach Preis ab 1.06 EUR bis 1.68 EUR
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GPAS1005 | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GPAS1005 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 16+ | 1.37 EUR |
| 100+ | 1.06 EUR |