GPAS1005 Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details GPAS1005 Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote GPAS1005 nach Preis ab 1.06 EUR bis 1.68 EUR
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GPAS1005 | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A TO263AB Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 50pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GPAS1005 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 10A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 16+ | 1.37 EUR |
| 100+ | 1.06 EUR |