GS-065-004-6-L-MR Infineon Technologies Canada Inc.
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 250+ | 2.74 EUR |
| 500+ | 2.54 EUR |
| 750+ | 2.36 EUR |
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Technische Details GS-065-004-6-L-MR Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V.
Weitere Produktangebote GS-065-004-6-L-MR nach Preis ab 1.78 EUR bis 6.16 EUR
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GS-065-004-6-L-MR | Infineon Technologies |
 GaN FETs LEGACY GAN SYSTEMS |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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GS-065-004-6-L-MR | Infineon Technologies Canada Inc. |
Description: GS-065-004-6-L-MR Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +7V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.6V @ 1mA Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 852 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GS-065-004-6-L-MR |
|
Hersteller: Infineon Technologies
GaN FETs LEGACY GAN SYSTEMS
GaN FETs LEGACY GAN SYSTEMS
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.23 EUR |
| 10+ | 3.41 EUR |
| 100+ | 2.6 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 1.87 EUR |
| 2500+ | 1.78 EUR |
| GS-065-004-6-L-MR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: GS-065-004-6-L-MR
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.16 EUR |
| 10+ | 4.03 EUR |
| 100+ | 3.22 EUR |