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GS-065-004-6-L-MR

GS-065-004-6-L-MR Infineon Technologies Canada Inc.


Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+3.26 EUR
500+3.02 EUR
750+2.81 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GS-065-004-6-L-MR Infineon Technologies Canada Inc.

Description: GS-065-004-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V.

Weitere Produktangebote GS-065-004-6-L-MR nach Preis ab 2.12 EUR bis 7.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
GS-065-004-6-L-MR GS-065-004-6-L-MR Infineon Technologies Infineon_GS_065_004_6_L_TR_DataSheet_v01_00_EN.pdf GaN FETs LEGACY GAN SYSTEMS
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.22 EUR
10+4.06 EUR
100+3.09 EUR
500+2.57 EUR
1000+2.23 EUR
2500+2.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-004-6-L-MR GS-065-004-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-004-6-L-MR
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.33 EUR
10+4.8 EUR
100+3.83 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-004-6-L-MR Infineon_GS_065_004_6_L_TR_DataSheet_v01_00_EN.pdf
GS-065-004-6-L-MR
Hersteller: Infineon Technologies
GaN FETs LEGACY GAN SYSTEMS
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.22 EUR
10+4.06 EUR
100+3.09 EUR
500+2.57 EUR
1000+2.23 EUR
2500+2.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-004-6-L-MR
GS-065-004-6-L-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.33 EUR
10+4.8 EUR
100+3.83 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH