GS-065-011-1-L-TR Infineon Technologies
auf Bestellung 2696 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.09 EUR |
| 10+ | 9.31 EUR |
| 25+ | 8.78 EUR |
| 100+ | 7.55 EUR |
| 250+ | 7.11 EUR |
| 500+ | 6.69 EUR |
| 1000+ | 6.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GS-065-011-1-L-TR Infineon Technologies
Description: GS-065-011-1-L-TR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 2.4mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V.
Weitere Produktangebote GS-065-011-1-L-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
GS-065-011-1-L-TR | Hersteller : GaN Systems |
 Trans MOSFET N-CH GaN 650V 11A 8-Pin PDFN EP T/R |
Produkt ist nicht verfügbar |
|
 |
GS-065-011-1-L-TR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-011-1-L-TR Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
Produkt ist nicht verfügbar |