GS0650186LRMRXUSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GS-065-018-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 6.16 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
250 Stücke
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Technische Details GS0650186LRMRXUSA1 Infineon Technologies
Description: GS-065-018-6-LR-MR, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 4.8mA, Supplier Device Package: 8-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V.
Weitere Produktangebote GS0650186LRMRXUSA1 nach Preis ab 6.83 EUR bis 15.27 EUR
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GS0650186LRMRXUSA1 | Infineon Technologies |
Description: GS-065-018-6-LR-MR Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V Vgs(th) (Max) @ Id: 2.6V @ 4.8mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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GS0650186LRMRXUSA1 | INFINEON |
Description: INFINEON - GS0650186LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 23 A, 0.09 ohm, 4.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
|
| GS0650186LRMRXUSA1 |
|
Hersteller: Infineon Technologies
Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.89 EUR |
| 10+ | 9.38 EUR |
| 50+ | 7.45 EUR |
| 100+ | 6.83 EUR |
| GS0650186LRMRXUSA1 |
|
Hersteller: INFINEON
Description: INFINEON - GS0650186LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 23 A, 0.09 ohm, 4.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - GS0650186LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 23 A, 0.09 ohm, 4.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 15.27 EUR |
| 20+ | 11.88 EUR |
| 25+ | 8.84 EUR |
| 50+ | 8.09 EUR |