
GS61008T-MR Infineon Technologies
auf Bestellung 3112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 14.70 EUR |
10+ | 12.58 EUR |
25+ | 11.42 EUR |
100+ | 10.96 EUR |
250+ | 9.31 EUR |
500+ | 9.24 EUR |
1000+ | 8.32 EUR |
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Technische Details GS61008T-MR Infineon Technologies
Description: GS61008T-MR, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 7mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V.
Weitere Produktangebote GS61008T-MR nach Preis ab 5.88 EUR bis 15.22 EUR
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GS61008T-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS61008T-MR Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Vgs(th) (Max) @ Id: 1.3V @ 7mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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GS61008T-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 100V 90A 4-Pin ULGA T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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GS61008T-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 100V 90A 4-Pin ULGA T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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GS61008T-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 100V 90A 4-Pin ULGA T/R |
auf Bestellung 872 Stücke: Lieferzeit 14-21 Tag (e) |
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GS61008T-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 100V 90A 4-Pin ULGA T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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GS61008T-MR | Hersteller : GaN Systems |
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Produkt ist nicht verfügbar |
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GS61008T-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS61008T-MR Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Vgs(th) (Max) @ Id: 1.3V @ 7mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V |
Produkt ist nicht verfügbar |