GS61008T-MR Infineon Technologies Canada Inc.
Hersteller: Infineon Technologies Canada Inc.
Description: GS61008T-MR
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 2+ | 15.22 EUR |
| 10+ | 10.64 EUR |
| 100+ | 9.54 EUR |
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Technische Details GS61008T-MR Infineon Technologies Canada Inc.
Description: GS61008T-MR, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +7V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs(th) (Max) @ Id: 1.3V @ 7mA, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote GS61008T-MR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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GS61008T-MR | Infineon Technologies Canada Inc. |
Description: GS61008T-MR Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): +7V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 1.3V @ 7mA Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
GS61008T-MR | Infineon Technologies |
 GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Top-side cooled |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GS61008T-MR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS61008T-MR
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: GS61008T-MR
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GS61008T-MR |
|
Hersteller: Infineon Technologies
GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Top-side cooled
GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Top-side cooled
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH