GS66504B-TR Infineon Technologies
auf Bestellung 1218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.69 EUR |
| 10+ | 18.32 EUR |
| 100+ | 16.91 EUR |
| 3000+ | 14.89 EUR |
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Technische Details GS66504B-TR Infineon Technologies
Description: GS66504B-TR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 3.5mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V.
Weitere Produktangebote GS66504B-TR nach Preis ab 21.88 EUR bis 31.7 EUR
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GS66504B-TR | Hersteller : GaN Systems |
 GaN FETs 650V, 15A, GaN E-mode, GaNPX package, Bottom-side cooled |
auf Bestellung 3111 Stücke: Lieferzeit 10-14 Tag (e) |
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| GS66504B-TR | Hersteller : GaN Systems |
Bottom Side Cooled 650 V E-mode GaN Transistor |
Produkt ist nicht verfügbar |
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GS66504B-TR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66504B-TR Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V Vgs(th) (Max) @ Id: 1.3V @ 3.5mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V |
Produkt ist nicht verfügbar |