GS66506T-MR

GS66506T-MR Infineon Technologies Canada Inc.


Hersteller: Infineon Technologies Canada Inc.
Description: GS66506T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
auf Bestellung 176 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.09 EUR
10+21.98 EUR
100+19.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details GS66506T-MR Infineon Technologies Canada Inc.

Description: GS66506T-MR, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 5mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V.

Weitere Produktangebote GS66506T-MR nach Preis ab 23.32 EUR bis 36.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GS66506T-MR GS66506T-MR Hersteller : Infineon Technologies GS66506T_DS_Rev_200402-3439716.pdf GaN FETs 650V, 22.5A, GaN E-mode, GaNPX package, Top-side cooled
auf Bestellung 1470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.82 EUR
10+32.45 EUR
25+31.59 EUR
50+29.81 EUR
100+29.78 EUR
250+25.31 EUR
1000+23.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-MR GS66506T-MR Hersteller : GaN Systems gs66506t-ds-rev-200402.pdf Top-Side Cooled 650 V E-Mode GaN Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-MR Hersteller : GaN Systems Inc GAN POWER TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-MR GS66506T-MR Hersteller : Infineon Technologies Canada Inc. Description: GS66506T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH