| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.13 EUR |
| 10+ | 25.24 EUR |
| 100+ | 20.92 EUR |
| 500+ | 18.72 EUR |
| 1000+ | 15.93 EUR |
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Technische Details GS66506T-MR Infineon Technologies
Description: GS66506T-MR, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 5mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V.
Weitere Produktangebote GS66506T-MR nach Preis ab 23.2 EUR bis 34.62 EUR
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GS66506T-MR | Infineon Technologies Canada Inc. |
Description: GS66506T-MR Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V Vgs(th) (Max) @ Id: 1.3V @ 5mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V |
auf Bestellung 176 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GS66506T-MR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS66506T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
Description: GS66506T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.62 EUR |
| 10+ | 26.16 EUR |
| 100+ | 23.2 EUR |