GS66508B-TR Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 33.65 EUR |
| 10+ | 27.53 EUR |
| 100+ | 24.31 EUR |
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Technische Details GS66508B-TR Infineon Technologies
Description: GS66508B-TR, Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +7V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.6V @ 7mA, Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).
Weitere Produktangebote GS66508B-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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GS66508B-TR | Infineon Technologies Canada Inc. |
Description: GS66508B-TR Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.6V @ 7mA Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GS66508B-TR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS66508B-TR
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: GS66508B-TR
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH