GS66508T-TR Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 33.67 EUR |
| 10+ | 27.54 EUR |
| 100+ | 25.4 EUR |
| 3000+ | 23.37 EUR |
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Technische Details GS66508T-TR Infineon Technologies
Description: GS66508T-TR, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 7mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V.
Weitere Produktangebote GS66508T-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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GS66508T-TR | Infineon Technologies Canada Inc. |
Description: GS66508T-TR Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V Vgs(th) (Max) @ Id: 2.6V @ 7mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GS66508T-TR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS66508T-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
Description: GS66508T-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH