GS66516TMRXUSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GS66516T-MR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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Technische Details GS66516TMRXUSA1 Infineon Technologies
Description: GS66516T-MR, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +7V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs(th) (Max) @ Id: 1.3V @ 14mA, Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote GS66516TMRXUSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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GS66516TMRXUSA1 | Infineon Technologies |
Description: GS66516T-MR Vgs(th) (Max) @ Id: 1.3V @ 14mA Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +7V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GS66516TMRXUSA1 |
Hersteller: Infineon Technologies
Description: GS66516T-MR
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Description: GS66516T-MR
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH