GSES12VD1006-2B Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: TVS DIODE 12VWM 26VC DFN10062L
Packaging: Tape & Reel (TR)
Package / Case: DFN1006
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: CAN
Capacitance @ Frequency: 9.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 150W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.047 EUR |
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Technische Details GSES12VD1006-2B Good-Ark Semiconductor
Description: TVS DIODE 12VWM 26VC DFN10062L, Packaging: Tape & Reel (TR), Package / Case: DFN1006, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 125°C (TJ), Applications: CAN, Capacitance @ Frequency: 9.3pF @ 1MHz, Current - Peak Pulse (10/1000µs): 5A (8/20µs), Voltage - Reverse Standoff (Typ): 12V (Max), Supplier Device Package: DFN1006-2L, Bidirectional Channels: 1, Voltage - Breakdown (Min): 13.3V, Voltage - Clamping (Max) @ Ipp: 26V, Power - Peak Pulse: 150W, Power Line Protection: No.
Weitere Produktangebote GSES12VD1006-2B nach Preis ab 0.052 EUR bis 0.28 EUR
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GSES12VD1006-2B | Hersteller : Good-Ark Semiconductor |
Description: TVS DIODE 12VWM 26VC DFN10062L Packaging: Cut Tape (CT) Package / Case: DFN1006 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TJ) Applications: CAN Capacitance @ Frequency: 9.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: DFN1006-2L Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 150W Power Line Protection: No |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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