GSF2315 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, SINGLE, P-CHANNEL, -20V,
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 37+ | 0.57 EUR |
| 43+ | 0.5 EUR |
| 100+ | 0.32 EUR |
| 250+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.17 EUR |
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Technische Details GSF2315 Good-Ark Semiconductor
Description: MOSFET, SINGLE, P-CHANNEL, -20V,, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 312mW (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V.
Weitere Produktangebote GSF2315
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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GSF2315 | Good-Ark Semiconductor |
Description: MOSFET, SINGLE, P-CHANNEL, -20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 312mW (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GSF2315 |
|
Hersteller: Good-Ark Semiconductor
Description: MOSFET, SINGLE, P-CHANNEL, -20V,
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Description: MOSFET, SINGLE, P-CHANNEL, -20V,
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH