GSFB2121 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -10.00A, -
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details GSFB2121 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -10.00A, -, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-DFN (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.9W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote GSFB2121 nach Preis ab 0.19 EUR bis 0.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GSFB2121 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -10.00A, - Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.9W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GSFB2121 |
|
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -10.00A, -
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -10.00A, -
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 0.58 EUR |
| 53+ | 0.4 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |