GSFCR2303 Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: MOSFET, P-CH, SINGLE, -2.00A, -2
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V
Rds On (Max) @ Id, Vgs: 119mOhm @ 2A, 4.5V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.066 EUR |
| 6000+ | 0.059 EUR |
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Technische Details GSFCR2303 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -2.00A, -2, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Power Dissipation (Max): 450mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V, Rds On (Max) @ Id, Vgs: 119mOhm @ 2A, 4.5V.
Weitere Produktangebote GSFCR2303 nach Preis ab 0.079 EUR bis 0.32 EUR
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GSFCR2303 | Hersteller : Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -2.00A, -2 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V Rds On (Max) @ Id, Vgs: 119mOhm @ 2A, 4.5V |
auf Bestellung 2627 Stücke: Lieferzeit 10-14 Tag (e) |
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