GSFK0502 Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: MOSFET, N-CH, DUAL, 0.3A, 50V, S
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GSFK0502 Good-Ark Semiconductor
Description: MOSFET, N-CH, DUAL, 0.3A, 50V, S, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Feature: Standard, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active, Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V, Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V.
Weitere Produktangebote GSFK0502 nach Preis ab 0.13 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GSFK0502 | Hersteller : Good-Ark Semiconductor |
Description: MOSFET, N-CH, DUAL, 0.3A, 50V, S Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Feature: Standard Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|