GSFP1526 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 15+ | 1.42 EUR |
| 25+ | 1.33 EUR |
| 100+ | 1.08 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.69 EUR |
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Technische Details GSFP1526 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25A, 150V,, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-PPAK (5.1x5.71), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 101W (Tc), Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote GSFP1526
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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GSFP1526 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 25A, 150V,Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PPAK (5.1x5.71) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GSFP1526 |
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Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.71)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET, N-CH, SINGLE, 25A, 150V,
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.71)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

