GSGN0648 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 65V,
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details GSGN0648 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 65V,, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): +20V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PPAK (3.1x3.05), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote GSGN0648 nach Preis ab 0.48 EUR bis 1.8 EUR
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GSGN0648 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 48A, 65V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): +20V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2564 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSGN0648 |
|
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 65V,
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 48A, 65V,
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 20+ | 1.09 EUR |
| 25+ | 0.9 EUR |
| 100+ | 0.69 EUR |
| 250+ | 0.6 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |