Technische Details GSIB2580N-M3/45 Vishay
Category: Flat single phase diode bridge rectif., Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A, Type of bridge rectifier: single-phase, Max. off-state voltage: 0.8kV, Load current: 25A, Max. forward impulse current: 350A, Version: flat, Case: GSIB-5S, Electrical mounting: THT, Leads: flat pin, Kind of package: tube, Max. forward voltage: 1V, Features of semiconductor devices: glass passivated.
Weitere Produktangebote GSIB2580N-M3/45
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GSIB2580N-M3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 25A GSIB-5SPackaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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GSIB2580N-M3/45 | Hersteller : Vishay Semiconductors |
Bridge Rectifiers 25A,800V,SINGLE INLINE BRIDGE |
Produkt ist nicht verfügbar |
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| GSIB2580N-M3/45 | Hersteller : VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |


