GSIB660-E3/45 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 20+ | 2.71 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.61 EUR |
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Technische Details GSIB660-E3/45 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S, Packaging: Tube, Package / Case: 4-SIP, GSIB-5S, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GSIB-5S, Part Status: Active, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 2.8 A, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote GSIB660-E3/45 nach Preis ab 1.9 EUR bis 4.8 EUR
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GSIB660-E3/45 | Hersteller : VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 180A Kind of package: tube Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 0.95V Load current: 6A Max. forward impulse current: 180A Max. off-state voltage: 0.6kV Version: flat Leads: flat pin Features of semiconductor devices: glass passivated Case: GSIB-5S |
Produkt ist nicht verfügbar |


