GSP65R13HB-EVB GaN Systems
Hersteller: GaN Systems
Power Management IC Development Tools 650V/13mOhm, 4-7kW Paralleled GaN High Performance IMS1 Half Bridge with Gate Drive
Produktrezensionen
Produktbewertung abgeben
Technische Details GSP65R13HB-EVB GaN Systems
Power Management IC Development Tools 650V/13mOhm, 4-7kW Paralleled GaN High Performance IMS1 Half Bridge with Gate Drive.
Weitere Produktangebote GSP65R13HB-EVB nach Preis ab 865.8 EUR bis 865.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
|
GSP65R13HB-EVB | Infineon Technologies |
Power Management IC Development Tools 650V/13mOhm, 4-7kW Paralleled GaN High Performance IMS1 Half Bridge with Gate Drive |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GSP65R13HB-EVB |
![]() |
Hersteller: Infineon Technologies
Power Management IC Development Tools 650V/13mOhm, 4-7kW Paralleled GaN High Performance IMS1 Half Bridge with Gate Drive
Power Management IC Development Tools 650V/13mOhm, 4-7kW Paralleled GaN High Performance IMS1 Half Bridge with Gate Drive
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 865.8 EUR |

