GT007N04TL Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N40V,150A,RD<1.5M@10V,VTH1.0V~2.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7363 pF @ 20 V
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Technische Details GT007N04TL Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 345A; 159W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 345A, Power dissipation: 159W, Case: TOLL, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 125nC, Kind of channel: enhancement, Technology: SGT.
Weitere Produktangebote GT007N04TL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| GT007N04TL | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 345A; 159W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 345A Power dissipation: 159W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 125nC Kind of channel: enhancement Technology: SGT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT007N04TL |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 345A; 159W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 345A
Power dissipation: 159W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SGT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 345A; 159W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 345A
Power dissipation: 159W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH