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GT016N10TL

GT016N10TL Goford Semiconductor

GT016N10TL.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 362A TOLL-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.47 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT016N10TL Goford Semiconductor

Description: MOSFET N-CH 100V 362A TOLL-8, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 362A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V, Package / Case: 8-PowerSFN, FET Type: N-Channel, Power Dissipation (Max): 450W (Tc), Drain to Source Voltage (Vdss): 100 V.

Weitere Produktangebote GT016N10TL nach Preis ab 3.49 EUR bis 7.76 EUR

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GT016N10TL GT016N10TL Hersteller : Goford Semiconductor GT016N10TL.pdf Description: MOSFET N-CH 100V 362A TOLL-8
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V
Package / Case: 8-PowerSFN
FET Type: N-Channel
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
10+5.16 EUR
100+3.68 EUR
500+3.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GT016N10TL GT016N10TL Hersteller : Goford Semiconductor GT016N10TL.pdf Description: MOSFET N-CH 100V 362A TOLL-8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V
Package / Case: 8-PowerSFN
FET Type: N-Channel
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100 V
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Im Einkaufswagen  Stück im Wert von  UAH