GT023N10M Goford Semiconductor

Description: MOSFET N-CH 100V 226A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 226A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 250µA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 50 V.