GT023N10T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 226A 250W 2.7m(
Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details GT023N10T Goford Semiconductor
Description: MOSFET N-CH 100V 226A 250W 2.7m(, Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.3V @ 250µA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote GT023N10T nach Preis ab 3.28 EUR bis 7.12 EUR
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GT023N10T | Goford Semiconductor |
Description: N100V, 140A,RD<2.7M@10V,VTH2.7V~ Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.3V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10T |
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Hersteller: Goford Semiconductor
Description: N100V, 140A,RD<2.7M@10V,VTH2.7V~
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: N100V, 140A,RD<2.7M@10V,VTH2.7V~
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.12 EUR |
| 50+ | 3.63 EUR |
| 100+ | 3.28 EUR |