GT095N10K Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
auf Bestellung 3922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.73 EUR |
| 11+ | 1.73 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT095N10K Goford Semiconductor
Description: N100V, RD(MAX).
Weitere Produktangebote GT095N10K
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
GT095N10K | Hersteller : Goford Semiconductor |
Description: N100V, RD(MAX)<10.5M@10V,RD(MAX) Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V |
Produkt ist nicht verfügbar |