GT100N12T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 50+ | 2.02 EUR |
| 100+ | 1.83 EUR |
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Technische Details GT100N12T Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; TO220, Case: TO220, Power dissipation: 100W, Gate charge: 45nC, Polarisation: unipolar, Technology: SGT, Drain current: 70A, Kind of channel: enhancement, Drain-source voltage: 120V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Mounting: THT.
Weitere Produktangebote GT100N12T nach Preis ab 1 EUR bis 1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| GT100N12T | GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT100N12T |
|
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1 EUR |