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GT105N10F

GT105N10F Goford Semiconductor

GT105N10F.pdf Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 50 V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
11+1.66 EUR
Mindestbestellmenge: 8
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Technische Details GT105N10F Goford Semiconductor

Description: MOSFET N-CH 100V 33A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V, Power Dissipation (Max): 20.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.

Weitere Produktangebote GT105N10F nach Preis ab 0.58 EUR bis 0.58 EUR

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GT105N10F Hersteller : GOFORD Semiconductor GT105N10F.pdf N-CH,100V,33A,RD(max) Less Than 10.5mOhm at 10V,RD(max) Less Than 15mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220F
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
254+0.58 EUR
Mindestbestellmenge: 254
Im Einkaufswagen  Stück im Wert von  UAH
GT105N10F GT105N10F Hersteller : Goford Semiconductor GT105N10F.pdf Description: MOSFET N-CH 100V 33A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH