GT105N10T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 11+ | 1.73 EUR |
| 100+ | 1.22 EUR |
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Technische Details GT105N10T Goford Semiconductor
Description: MOSFET N-CH 100V 55A TO-220, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 74W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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GT105N10T | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 100V 55A TO-220 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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