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GT105N10T

GT105N10T Goford Semiconductor

GT105N10T.pdf Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 50 V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
11+1.73 EUR
100+1.22 EUR
Mindestbestellmenge: 7
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Technische Details GT105N10T Goford Semiconductor

Description: MOSFET N-CH 100V 55A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.

Weitere Produktangebote GT105N10T nach Preis ab 0.53 EUR bis 0.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GT105N10T Hersteller : GOFORD Semiconductor GT105N10T.pdf N-CH,100V,60A,RD(max) Less Than 10.5mOhm at 10V, VTH2.5V to 4.0V, TO-252
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
246+0.59 EUR
15000+0.53 EUR
Mindestbestellmenge: 246
Im Einkaufswagen  Stück im Wert von  UAH
GT105N10T GT105N10T Hersteller : Goford Semiconductor GT105N10T.pdf Description: MOSFET N-CH 100V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH