Technische Details GT180P08T GOFORD Semiconductor
Category: THT P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220, Type of transistor: P-MOSFET, Technology: SGT, Polarisation: unipolar, Drain-source voltage: -80V, Drain current: -89A, Power dissipation: 245W, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 103nC, Kind of channel: enhancement.
Weitere Produktangebote GT180P08T
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GT180P08T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220 Type of transistor: P-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: -80V Drain current: -89A Power dissipation: 245W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 103nC Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH |