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Technische Details GT2K0P20T GOFORD Semiconductor
Category: THT P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -19A; 138W; TO220, Type of transistor: P-MOSFET, Mounting: THT, Power dissipation: 138W, Gate charge: 70nC, Polarisation: unipolar, Technology: SGT, Drain current: -19A, Kind of channel: enhancement, Drain-source voltage: -200V, Gate-source voltage: ±20V, Case: TO220.
Weitere Produktangebote GT2K0P20T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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GT2K0P20T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -19A; 138W; TO220 Type of transistor: P-MOSFET Mounting: THT Power dissipation: 138W Gate charge: 70nC Polarisation: unipolar Technology: SGT Drain current: -19A Kind of channel: enhancement Drain-source voltage: -200V Gate-source voltage: ±20V Case: TO220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT2K0P20T |
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -19A; 138W; TO220
Type of transistor: P-MOSFET
Mounting: THT
Power dissipation: 138W
Gate charge: 70nC
Polarisation: unipolar
Technology: SGT
Drain current: -19A
Kind of channel: enhancement
Drain-source voltage: -200V
Gate-source voltage: ±20V
Case: TO220
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -19A; 138W; TO220
Type of transistor: P-MOSFET
Mounting: THT
Power dissipation: 138W
Gate charge: 70nC
Polarisation: unipolar
Technology: SGT
Drain current: -19A
Kind of channel: enhancement
Drain-source voltage: -200V
Gate-source voltage: ±20V
Case: TO220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH