GT30J341,Q Toshiba
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.46 EUR |
| 10+ | 4.61 EUR |
| 50+ | 4.47 EUR |
| 100+ | 3.84 EUR |
| 200+ | 3.71 EUR |
| 500+ | 3.4 EUR |
| 1000+ | 2.73 EUR |
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Technische Details GT30J341,Q Toshiba
Description: IGBT 600V 59A TO-3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-3P(N), Td (on/off) @ 25°C: 80ns/280ns, Switching Energy: 800µJ (on), 600µJ (off), Test Condition: 300V, 30A, 24Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 59 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 230 W.
Weitere Produktangebote GT30J341,Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GT30J341,Q | Hersteller : Toshiba |
 Trans IGBT Chip N-CH 600V 59A 230W 3-Pin(3+Tab) TO-3PN |
Produkt ist nicht verfügbar |
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GT30J341,Q | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 59A 230W 3-Pin(3+Tab) TO-3PN |
Produkt ist nicht verfügbar |
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GT30J341,Q | Hersteller : Toshiba Semiconductor and Storage |
Description: IGBT 600V 59A TO-3P Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-3P(N) Td (on/off) @ 25°C: 80ns/280ns Switching Energy: 800µJ (on), 600µJ (off) Test Condition: 300V, 30A, 24Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 59 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 230 W |
Produkt ist nicht verfügbar |