GT40QR21(STA1,E,D TOSHIBA
Hersteller: TOSHIBACategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 35A
Pulsed collector current: 80A
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO3PN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.56 EUR |
| 22+ | 3.4 EUR |
| 23+ | 3.22 EUR |
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Technische Details GT40QR21(STA1,E,D TOSHIBA
Description: IGBT 1200V 40A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 600 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, Supplier Device Package: TO-3P(N), Switching Energy: -, 290µJ (off), Test Condition: 280V, 40A, 10Ohm, 20V, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 230 W.
Weitere Produktangebote GT40QR21(STA1,E,D nach Preis ab 3.22 EUR bis 8.61 EUR
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GT40QR21(STA1,E,D | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 35A Pulsed collector current: 80A Turn-on time: 0.3µs Turn-off time: 0.6µs Type of transistor: IGBT Power dissipation: 230W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO3PN |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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GT40QR21(STA1,E,D | Hersteller : Toshiba Semiconductor and Storage |
Description: IGBT 1200V 40A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 290µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 230 W |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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GT40QR21(STA1,E,D | Hersteller : Toshiba |
Trans IGBT Chip N-CH 1200V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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GT40QR21(STA1,E,D | Hersteller : Toshiba |
IGBT Transistors DISCRETE IGBT TRANSISTOR TO-3PN(OS) MQO=25 V=1200 IC=40A |
auf Bestellung 120 Stücke: Lieferzeit 14-28 Tag (e) |
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| GT40QR21(STA1,E,D) | Hersteller : TOSHIBA |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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GT40QR21(STA1,E,D | Hersteller : Toshiba |
Trans IGBT Chip N-CH 1200V 40A 230000mW 3-Pin(3+Tab) TO-3PN Magazine |
Produkt ist nicht verfügbar |
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GT40QR21(STA1,E,D | Hersteller : Toshiba |
Trans IGBT Chip N-CH 1200V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine |
Produkt ist nicht verfügbar |