GT40QR21(STA1,E,D TOSHIBA
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Collector current: 35A
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 0.6µs
Power dissipation: 230W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 0.3µs
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.24 EUR |
| 20+ | 4.28 EUR |
| 25+ | 3.69 EUR |
| 50+ | 3.57 EUR |
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Technische Details GT40QR21(STA1,E,D TOSHIBA
Description: IGBT 1200V 40A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 600 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, Supplier Device Package: TO-3P(N), Switching Energy: -, 290µJ (off), Test Condition: 280V, 40A, 10Ohm, 20V, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 230 W.
Weitere Produktangebote GT40QR21(STA1,E,D nach Preis ab 4.27 EUR bis 10.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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GT40QR21(STA1,E,D | Toshiba Semiconductor and Storage |
Description: IGBT 1200V 40A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 290µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 230 W |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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GT40QR21(STA1,E,D | Toshiba |
IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) MQO=25 V=1200 IC=40A |
auf Bestellung 414 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT40QR21(STA1,E,D) | TOSHIBA |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| GT40QR21(STA1,E,D |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.51 EUR |
| 25+ | 5.51 EUR |
| GT40QR21(STA1,E,D |
|
Hersteller: Toshiba
IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) MQO=25 V=1200 IC=40A
IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) MQO=25 V=1200 IC=40A
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.42 EUR |
| 10+ | 6.06 EUR |
| 100+ | 4.86 EUR |
| 500+ | 4.27 EUR |
| GT40QR21(STA1,E,D) |
Hersteller: TOSHIBA
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)