GT60N321(Q) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1000V 60A TO-3P
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Td (on/off) @ 25°C: 330ns/700ns
Supplier Device Package: TO-3P(LH)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Reverse Recovery Time (trr): 2.5 µs
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Tube
Power - Max: 170 W
Current - Collector Pulsed (Icm): 120 A
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Technische Details GT60N321(Q) Toshiba Semiconductor and Storage
Description: IGBT 1000V 60A TO-3P, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector (Ic) (Max): 60 A, Part Status: Obsolete, Td (on/off) @ 25°C: 330ns/700ns, Supplier Device Package: TO-3P(LH), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A, Reverse Recovery Time (trr): 2.5 µs, Input Type: Standard, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PL, Packaging: Tube, Power - Max: 170 W, Current - Collector Pulsed (Icm): 120 A.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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GT60N321(Q) | Hersteller : Toshiba |
 IGBT Transistors IGBT 1000V 60A |
Produkt ist nicht verfügbar |