GT700P08T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-80V, -25A,RD<72M@-10V,VTH-2V~-
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 40 V
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.87 EUR |
| 50+ | 1.36 EUR |
| 100+ | 1.21 EUR |
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Technische Details GT700P08T Goford Semiconductor
Category: THT P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -25A; 125W; TO220, Case: TO220, Mounting: THT, Power dissipation: 125W, Gate charge: 75nC, Polarisation: unipolar, Technology: SGT, Drain current: -25A, Kind of channel: enhancement, Drain-source voltage: -80V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V.
Weitere Produktangebote GT700P08T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
GT700P08T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -25A; 125W; TO220 Case: TO220 Mounting: THT Power dissipation: 125W Gate charge: 75nC Polarisation: unipolar Technology: SGT Drain current: -25A Kind of channel: enhancement Drain-source voltage: -80V Type of transistor: P-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT700P08T |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -25A; 125W; TO220
Case: TO220
Mounting: THT
Power dissipation: 125W
Gate charge: 75nC
Polarisation: unipolar
Technology: SGT
Drain current: -25A
Kind of channel: enhancement
Drain-source voltage: -80V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -25A; 125W; TO220
Case: TO220
Mounting: THT
Power dissipation: 125W
Gate charge: 75nC
Polarisation: unipolar
Technology: SGT
Drain current: -25A
Kind of channel: enhancement
Drain-source voltage: -80V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH