| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.65 EUR |
| 5000+ | 0.62 EUR |
| 10000+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details H11AA1TVM onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP, Packaging: Tube, Package / Case: 6-DIP (0.400", 10.16mm), Output Type: Transistor with Base, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 100°C, Voltage - Forward (Vf) (Typ): 1.17V, Input Type: AC, DC, Current - Output / Channel: 50mA, Voltage - Isolation: 4170Vrms, Current Transfer Ratio (Min): 20% @ 10mA, Vce Saturation (Max): 400mV, Supplier Device Package: 6-DIP, Voltage - Output (Max): 30V, Part Status: Active, Number of Channels: 1, Current - DC Forward (If) (Max): 60 mA.
Weitere Produktangebote H11AA1TVM
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
H11AA1TVM | ONSEMI |
Description: ONSEMI - H11AA1TVM - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 816 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 816 Stücke Im Einkaufswagen Stück im Wert von UAH |
| H11AA1TVM |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - H11AA1TVM - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - H11AA1TVM - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 816 Stücke:
Lieferzeit 14-21 Tag (e)



