HAS530M12BM3 Wolfspeed
Hersteller: Wolfspeed
Discrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Industrial, Harsh Environment
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Technische Details HAS530M12BM3 Wolfspeed
Description: MOSFET 2N-CH 1200V 530A, FET Feature: Silicon Carbide (SiC), Current - Continuous Drain (Id) @ 25°C: 530A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote HAS530M12BM3 nach Preis ab 1853.58 EUR bis 1853.58 EUR
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HAS530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 530A FET Feature: Silicon Carbide (SiC) Current - Continuous Drain (Id) @ 25°C: 530A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| HAS530M12BM3 |
|
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: MOSFET 2N-CH 1200V 530A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1853.58 EUR |