
HAT2054M-EL-E Renesas Electronics Corporation

Description: MOSFET N-CH 30V 6.3A 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 10V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 6-TSOP
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
auf Bestellung 8893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
508+ | 0.96 EUR |
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Technische Details HAT2054M-EL-E Renesas Electronics Corporation
Description: MOSFET N-CH 30V 6.3A 6TSOP, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 10V, Power Dissipation (Max): 1.05W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 6-TSOP, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V.
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