HAT2092R-EL-E Renesas Electronics Corporation

Description: MOSFET 2N-CH 30V 11A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).