| Anzahl | Privatkunde |
|---|---|
| 133+ | 1.31 EUR |
| 135+ | 1.25 EUR |
| 137+ | 1.18 EUR |
| 139+ | 1.12 EUR |
| 141+ | 1.06 EUR |
| 250+ | 1 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.93 EUR |
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Technische Details HAT2092R-EL-E Renesas
Description: MOSFET 2N-CH 30V 11A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote HAT2092R-EL-E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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HAT2092R-EL-E | Renesas Electronics Corporation |
 Description: MOSFET 2N-CH 30V 11A 8SOPSupplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Current - Continuous Drain (Id) @ 25°C: 11A Drain to Source Voltage (Vdss): 30V Power - Max: 3W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
HAT2092R-EL-E | Renesas Electronics |
MOSFET MOSFET - 30V SO-8 - Lead Free |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| HAT2092R-EL-E |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 30V 11A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 11A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HAT2092R-EL-E |
|
Hersteller: Renesas Electronics
MOSFET MOSFET - 30V SO-8 - Lead Free
MOSFET MOSFET - 30V SO-8 - Lead Free
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH