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HAT2168H-EL-E

HAT2168H-EL-E Renesas Electronics

rej03g0046_hat2168h-1090376.pdf
Hersteller: Renesas Electronics
MOSFET MOSFET - 30V LFPAK - Lead Free
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Technische Details HAT2168H-EL-E Renesas Electronics

Description: MOSFET N-CH 30V 30A LFPAK, Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK, Power Dissipation (Max): 15W (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V.

Weitere Produktangebote HAT2168H-EL-E

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HAT2168H-EL-E HAT2168H-EL-E Renesas Electronics Corporation hat2168h-datasheet Description: MOSFET N-CH 30V 30A LFPAK
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HAT2168H-EL-E HAT2168H-EL-E Renesas Electronics Corporation hat2168h-datasheet Description: MOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 15W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HAT2168H-EL-E hat2168h-datasheet
HAT2168H-EL-E
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HAT2168H-EL-E hat2168h-datasheet
HAT2168H-EL-E
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 15W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH