HAT2196C-EL-E Renesas

Description: HAT2196C - N-CHANNEL POWER MOSFE, Packaging: Bulk, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 58mOhm @ 1.3A, 4.5V, Power Dissipation (Max): 850mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: 6-CMFPAK, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.