HAT2199R-EL-E Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 11A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-SOP
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 325+ | 1.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HAT2199R-EL-E Renesas Electronics Corporation
Description: MOSFET N-CH 30V 11A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-SOP, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.