HAT2201WP-EL-E Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: 15A, 100V, N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Supplier Device Package: 8-WPAK
Rds On (Max) @ Id, Vgs: 43mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Bulk
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Technische Details HAT2201WP-EL-E Renesas Electronics Corporation
Description: 15A, 100V, N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Supplier Device Package: 8-WPAK, Rds On (Max) @ Id, Vgs: 43mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Bulk.
Weitere Produktangebote HAT2201WP-EL-E nach Preis ab 2.59 EUR bis 3.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| HAT2201WP-EL-E | Renesas |
Silicon N Channel Power MOS FET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| HAT2201WP-EL-E |
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Hersteller: Renesas
Silicon N Channel Power MOS FET
Silicon N Channel Power MOS FET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 202+ | 3.24 EUR |
| 500+ | 2.87 EUR |
| 1000+ | 2.59 EUR |