Produkte > RENESAS > HAT2205C-EL-E

HAT2205C-EL-E Renesas

r07ds1181ej0500_hat2205c.pdf
Hersteller: Renesas
Description: HAT2205C - N-CHANNEL POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-CMFPAK
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
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Technische Details HAT2205C-EL-E Renesas

Description: HAT2205C - N-CHANNEL POWER MOSFE, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-CMFPAK, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Bulk.